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1

Modeling memory effects in RF power amplifiers applied to a digital pre-distortion algorithm and emulated on a DSP-FPGA board

Ricardo Cárdenas-Valdez, José, Cruz Núñez-Pérez, José, Alejandro Galaviz-Aguilar, José, Calvillo-Téllez, Andrés, Gontrand, Christian, Apolinar Reynoso-Hernández, J., Tlelo-Cuautle, Esteban

Journal:

Integration, the VLSI Journal

Year:

2015

Language:

english

File:

PDF, 4.04 MB

english, 2015

2

Mixed-signal IC design guide to enhance substrate noise immunity in bulk silicon technology

Olivier Valorge, Francis Calmon, Cristian Andrei, Christian Gontrand, Pierre Dautriche

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2010

Language:

english

File:

PDF, 910 KB

english, 2010

3

[IEEE 2014 International Conference on Electronics, Communications and Computers (CONIELECOMP) - Cholula., Mexico (2014.02.26-2014.02.28)] 2014 International Conference on Electronics, Communications and Computers (CONIELECOMP) - Measure-based modeling and FPGA implementation of RF Power Amplifier using a multi-layer perceptron neural network

Nunez-Perez, J. C., Cardenas-Valdez, J. R., Galaviz Aguilar, J. A., Gontrand, C., Goral, B., Verdier, J.

Year:

2014

Language:

english

File:

PDF, 877 KB

english, 2014

4

Wood washing: Influence on gaseous and particulate emissions during wood combustion in a domestic pellet stove

Schmidt, Guillaume, Trouvé, Gwenaëlle, Leyssens, Gontrand, Schönnenbeck, Cornelius, Genevray, Paul, Cazier, Fabrice, Dewaele, Dorothée, Vandenbilcke, Coralie, Faivre, Elodie, Denance, Yann, Le Dreff-L

Journal:

Fuel Processing Technology

Year:

2018

Language:

english

File:

PDF, 1.19 MB

english, 2018

5

Adjustable Intragastric Balloons: A 12-Month Pilot Trial in Endoscopic Weight Loss Management

Evzen Machytka, Pavel Klvana, Asher Kornbluth, Steven Peikin, Lisbeth E. M. Mathus-Vliegen, Christopher Gostout, Gontrand Lopez-Nava, Scott Shikora, Jeffrey Brooks

Journal:

Obesity Surgery

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

6

A fast-settling 3 V CMOS buffer amplifier

Gradinariu, I., Gontrand, C.

Journal:

IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications

Year:

1996

Language:

english

File:

PDF, 452 KB

english, 1996

7

An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration

Lorival, Jean-Etienne, Calmon, Francis, Sun, Fengyuan, Frantz, Felipe, Plossu, Carole, Le Berre, Martine, O’Connor, Ian, Valorge, Olivier, Charbonnier, Jean, Henry, David, Gontrand, Christian

Journal:

Microelectronics Journal

Year:

2015

Language:

english

File:

PDF, 5.75 MB

english, 2015

8

The Primary Obesity Surgery Endolumenal (POSE) procedure: one-year patient weight loss and safety outcomes

López-Nava, Gontrand, Bautista-Castaño, Inmaculada, Jimenez, Amaya, de Grado, Teresa, Fernandez-Corbelle, Juan Pedro

Journal:

Surgery for Obesity and Related Diseases

Year:

2015

Language:

english

File:

PDF, 459 KB

english, 2015

9

Spatial analysis of endemism to redefine conservation areas in Western Ghats (India)

Gaucherel, C., Vezy, R., Gontrand, F., Bouchet, D., Ramesh, B.R.

Journal:

Journal for Nature Conservation

Year:

2016

Language:

english

File:

PDF, 1.12 MB

english, 2016

10

Electrothermal Modeling for 3-D Nanoscale Circuit Substrates: Noise

Ma, Yue, Fakri-Bouchet, Latifa, Calmon, Francis, Gontrand, Christian

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Year:

2016

Language:

english

File:

PDF, 1.90 MB

english, 2016

11

Design and characterization of high voltage devices integrated in a standard CMOS technology

Villard, B., Calmon, F., Gontrand, C.

Journal:

The European Physical Journal Applied Physics

Year:

2001

Language:

english

File:

PDF, 309 KB

english, 2001

12

Impact of TSV location in HVIC on CMOS operation: A mixed-mode TCAD simulation study

Abouelatta, Mohamed, Shaker, Ahmed, Gontrand, Christian

Journal:

Microelectronics Journal

Year:

2018

Language:

english

File:

PDF, 3.00 MB

english, 2018

13

Réalisation d’une décortiqueuse à graines de néré «Parkia Biglobosa» : optimisation et validation des performances techniques centrées sur les utilisateurs

Ahouansou, Roger Houêchéné, Bagan, Gontrand Comlan, Sanya, Emile Adjibadé, Vianou, Antoine, Hounhouigan, Djidjoho Joseph

Journal:

Journal of Applied Biosciences

Year:

2017

File:

PDF, 829 KB

2017

14

Parasitic Suppression in 2D Smart Power ICs Using Deep Trench Isolation: A Simulation Study

Abouelatta, Mohamed, Salem, Marwa S., Shaker, Ahmed, Elbanna, Mohamed, Zekry, Abdelhalim, Gontrand, Christian

Journal:

National Academy Science Letters

Year:

2019

Language:

english

File:

PDF, 541 KB

english, 2019

15

Digital Communication Techniques ||

Gontrand, Christian

Year:

2020

File:

PDF, 30.14 MB

2020

16

Physically Based Analytical Model of heavily doped silicon wafers Based proposed solar cell microstructure

Salem, Marwa. S., Alzahrani, Abdullah J., Ramadan, Rabie A., Alanazi, Adwan, Shaker, A., Abouelatta, M., Gontrand, Christian, Elbanna, M. M., Zekry, A.

Journal:

Year:

2020

File:

PDF, 696 KB

2020

17

[IEEE 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) - Orlando, FL, USA (2020.6.3-2020.6.30)] 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) - Design and fabrication of an ultra-thin silicon vapor chamber for compact electronic cooling

Struss, Quentin, Coudrain, Perceval, Colonna, Jean-Philippe, Souifi, Abdelkader, Gontrand, Christian, Deschaseaux, Edouard, Mauguen, Gaelle, Mathieu, Vincent, Magis, Thomas, Simon, Gilles, Frechette,

Year:

2020

File:

PDF, 1.05 MB

2020

18

Effet tunnel dans la diode émetteur/base d'un transistor bipolaire compatible CMOS dédié à la RF

S. Latreche, C. Gontrand

Journal:

physica status solidi (b)

Year:

1999

File:

PDF, 253 KB

1999

19

Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals

Christian Gontrand, Manel Bouhouche, José-Cruz Nuñez Perez, Olivier Valorge, Francis Calmon, Jacques Verdier, Saïda Latreche

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2009

Language:

english

File:

PDF, 571 KB

english, 2009

20

Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion

L. Kaabi, C. Gontrand, B. Remaki, F. Seigneur, B. Balland

Journal:

Microelectronics Journal

Year:

1994

Language:

english

File:

PDF, 729 KB

english, 1994

21

Transport parameters of hot electrons in GaAs at 300 K

D. Gasquet, M. de Murcia, J.P. Nougier, C. Gontrand

Journal:

Year:

1985

Language:

english

File:

PDF, 189 KB

english, 1985

22

Impact of low-frequency substrate disturbances on a 4.5 GHz VCO

Francis Calmon, Cristian Andrei, Olivier Valorge, Jose-Cruz Nuñez Perez, Jacques Verdier, Christian Gontrand

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 519 KB

english, 2006

23

Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology

José Cruz Nunez–Perez, Jacques Verdier, Christian Gontrand

Journal:

Microelectronics Journal

Year:

2010

Language:

english

File:

PDF, 779 KB

english, 2010

24

Method for modeling the noise of submicron devices

J.P. Nougier, C. Gontrand, J.C. Vaissiere

Journal:

Year:

1985

Language:

english

File:

PDF, 134 KB

english, 1985

25

About boron and arsenic diffusions in polycrystalline silicon under rapid thermal oxidation

B. Semmache, A. Merabet, C. Gontrand, A. Laugier

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

26

Corrigendum to: “The decrease of carbonation efficiency of CaO along calcination–carbonation cycles: Experiments and modelling” [Chem. Eng. Sci. 64 (2009) 2136–2146]

Eric Bouquet, Gontrand Leyssens, Cornelius Schönnenbeck, Patrick Gilot

Journal:

Chemical Engineering Science

Year:

2010

Language:

english

File:

PDF, 73 KB

english, 2010

27

Modelling of through silicon via and devices electromagnetic coupling

Mohamed Abouelatta-Ebrahim, Rabah Dahmani, Olivier Valorge, Francis Calmon, Christian Gontrand

Journal:

Microelectronics Journal

Year:

2011

Language:

english

File:

PDF, 1.95 MB

english, 2011

28

Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing

A. Merabet, C. Gontrand

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 218 KB

english, 2003

29

Rapid Thermal Annealing of Arsenic Implanted Monocrystalline Silicon

G. Chaussemy, C. Gontrand, S. N. Kumar, B. Canut, D. Barbier, A. Laugier

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 661 KB

english, 1991

30

Procédés thermiques rapides pour la fabrication de structures bipolaires dédiées à la ULSI

A. Merabet, Y. Haddab, C. Gontrand

Journal:

physica status solidi (a)

Year:

1992

File:

PDF, 617 KB

1992

31

Implantation damage and anomalous diffusion of implanted boron in silicon through SiO2 films

L. Kaabi, C. Gontrand, M. Lemiti, B. Balland

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 520 KB

english, 1993

32

Dopant Redistribution during Rapid Thermal Annealing in a Self-Aligned Polysilicon Emitter Bipolar Structure Compatible with a Complementary Metal-Oxide-Semiconductor Technology

A. Merabet, C. Gontrand

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 619 KB

english, 1994

33

BioEnterics® Intragastric Balloon (BIB®). Single Ambulatory Center Spanish Experience with 714 Consecutive Patients Treated with One or Two Consecutive Balloons

Gontrand Lopez-Nava, Miguel Angel Rubio, Susana Prados, Gabriela Pastor, Mar Rodriguez Cruz, Ena Companioni, Andres Lopez

Journal:

Obesity Surgery

Year:

2011

Language:

english

File:

PDF, 117 KB

english, 2011

34

Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

D. Rechem, S. Latreche, C. Gontrand

Journal:

Year:

2009

Language:

english

File:

PDF, 568 KB

english, 2009

35

The decrease of carbonation efficiency of CaO along calcination–carbonation cycles: Experiments and modelling

Eric Bouquet, Gontrand Leyssens, Cornelius Schönnenbeck, Patrick Gilot

Journal:

Chemical Engineering Science

Year:

2009

Language:

english

File:

PDF, 742 KB

english, 2009

36

Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures

C. Gontrand, A. Merabet, S. Krieger-Kaddour, C. Dubois, J. P. Vallard

Journal:

Journal of Electronic Materials

Year:

1993

Language:

english

File:

PDF, 1.37 MB

english, 1993

37

Analyse des procédés technologiques appliqués

Bruno Allard, Christian Gontrand, Jean-Pierre Chante

Journal:

annals of telecommunications - annales des télécommunications

Year:

1991

File:

PDF, 913 KB

1991

38

The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

L. Kaabi, B. Remaki, C. Gontrand, P.F. Lo, B. Balland

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 490 KB

english, 1996

39

RTA processing of ionic boron implanted in silicon through screen oxide films: effects of some technological parameters

L. Kaabi, C. Gontrand, J.C. Bureau, Z. Sassi, J. Ben Brahim, B. Balland

Journal:

Annales de Chimie Science des Matériaux

Year:

1998

Language:

english

File:

PDF, 425 KB

english, 1998

40

Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing

L. Kaabi, C. Gontrand, M. Lemiti, B. Remaki, B. Balland, J. Meddeb, O. Marty

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 588 KB

english, 1996

41

A high-performance lateral PNP transistor structure

Gradinariu, I., Gontrand, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

42

Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization

L. Kaabi, C. Gontrand, P. Pinard, B. Balland, B. Remaki, M. Gamoudi, G. Guillaud

Journal:

Synthetic Metals

Year:

1997

Language:

english

File:

PDF, 501 KB

english, 1997

43

Numerical modeling of MOS transistor with interconnections using lumped element-FDTD method

Samir Labiod, Saida Latreche, Christian Gontrand

Journal:

Microelectronics Journal

Year:

2012

Language:

english

File:

PDF, 1.89 MB

english, 2012

44

The scent glands of the male south american locust Schistocerca cancellata, an electron microscope study

F. Hawkes, J. Rzepka, G. Gontrand

Journal:

Tissue and Cell

Year:

1987

Language:

english

File:

PDF, 12.56 MB

english, 1987

45

Sa1624 Adjustable Intragastric Balloon: The First Patient Experience in Spain

Gontrand Lopez-Nava Breviere, Javier Nebreda, Christopher J. Gostout, Jeffrey Brooks

Journal:

Gastrointestinal Endoscopy

Year:

2012

Language:

english

File:

PDF, 62 KB

english, 2012

46

Susceptibility to Severe Ulcerative Colitis Is Associated With Polymorphism in the Central MHC Gene IKBL

Emilio G. de la Concha*, Miguel Fernandez-Arquero*, Gontrand Lopez-Nava‡, Ester Martin*, Richard J. Allcock§, Laura Conejero*, Julio Garcia Paredes‡, Manuel Diaz-Rubio‡

Journal:

Gastroenterology

Year:

2000

Language:

english

File:

PDF, 142 KB

english, 2000

47

Modelling of parasitic effects induced by electrically active defects in a SiGe HBT

Lakhdara, M., Latreche, S., Gontrand, C.

Journal:

The European Physical Journal Applied Physics

Year:

2008

Language:

english

File:

PDF, 856 KB

english, 2008

48

Multi-Centre European Experience with Intragastric Balloon in Overweight Populations: 13 Years of Experience

Alfredo Genco, Gontrand López-Nava, Christian Wahlen, Roberta Maselli…

Journal:

Obesity Surgery

Year:

2013

Language:

english

File:

PDF, 181 KB

english, 2013

49

A new approach of power electronic design using a nonlinear average model

Benachour, Redha, Latreche, Saïda, El Hadi Latreche, Mohamed, Gontrand, Christian

Journal:

COMPEL Int J for Computation and Maths in Electrical and Electronic Eng

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

50

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - New numerical power IGBT model and simulation of its electrical characteristics

Benbahouche, L., Latrech, S., Gontrand, C.

Year:

2002

Language:

english

File:

PDF, 181 KB

english, 2002

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